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ay ch 7 stack 1
AY ch 7 study stack
Question | Answer |
---|---|
Burst EDO | a refined version of EDO memory that significantly improved access time over EDO. |
CAS Latency | a method of measuring access timing to memory,which is the number of clock cycles required to write or read a column of data off a memory module. |
C-RIMM | a placeholder RIMM module that provides continuity so that every RIMM slot is filled. |
DDR2 | runs at triple the speed of the system clock. |
DDR3 | runs at quadruple the speed of the system clock. |
Direct Rambus DRAM | RAM design by rambus |
Double Data Rate SDRAM | a type of memory technology used on DIMMs that runs at twice the speed of the system clock. |
DDR | runs at twice the speed of the system clock. |
double-sided | a DIMM feature whereby memory chips are installed on both sides of a DIMM. |
dual channels | a motherboard feature that improves memory performance by providing two 64-bit channels between memory and the chip-set . |
dual ranked | double -sided DIMMs that provides two 64-bit banks.the memory controller accesses first one bank than then the other. |
dynamic RAM | or DRAM/Dynamic random access memory |
ECC | chips is featured on the motherboard that checks the integrity of data stored on DIMMs or RIMMs and can correct single-bit errors in a byte. |
EDO | faster then conventional RAM because it eliminated the delay before it issued the the next memory address. |
FPM | a type of Dynamic RAM (DRAM) that allows faster access to data in the same row or page. Page-mode memory works by eliminating the need for a row address if data is located in the row previously accessed. It is sometimes called page mode memory. |